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 Agilent HSSR-7110, HSSR-7111 & HSSR-7112, HSSR-711E 5962-9314001, 5962-9314002 90 V/1.0 , Hermetically Sealed, Power MOSFET Optocoupler
Technical Data
Features Description The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and SMD 5962-93140 are single channel power MOSFET optocouplers, constructed in eight-pin, hermetic, dual-inline, ceramic packages. The devices operate exactly like a solid-state relay. The products are capable of operation and storage over the full military temperature range and may be purchased as a standard product (HSSR-7110), with full MIL-PRF-38534 Class H testing (HSSR-7111 and HSSR- 7112), with MIL-PRF38534 Class E testing (Class K with exceptions) (HSSR-711E) or from the DSCC Standard Microcircuit Drawing (SMD) 5962-93140. Details of the Class E program may be found on page 11 of this datasheet. Applications * Military and Space * High Reliability Systems * Standard 28 Vdc and 48 Vdc Load Driver * Standard 24 Vac Load Driver * Aircraft Controls * ac/dc Electromechanical and Solid State Relay Replacement * I/O Modules * Harsh Industrial Environments * Dual Marked with Device Part Number and DSCC Standard Microcircuit Drawing * ac/dc Signal & Power Switching * Compact Solid-State Bidirectional Switch * Manufactured and Tested on a MIL-PRF-38534 Certified Line * QML-38534 * MIL-PRF-38534 Class H * Modified Space Level Processing Available (Class E) * Hermetically Sealed 8-Pin Dual In-Line Package * Small Size and Weight * Performance Guaranteed over -55C to +125C * Connection A 0.8 A, 1.0 * Connection B 1.6 A, 0.25 Functional Diagrams
CONNECTION A AC/DC CONNECTION IO 1 NC IF +2 VF -3 4 NC 6 5 7 VO VF -3 4 NC 6 5 8 + IF +2 7 1 NC 8 CONNECTION B DC CONNECTION IO + VO TRUTH TABLE INPUT H L OUTPUT CLOSED OPEN
* 1500 Vdc Withstand Test Voltage * High Transient Immunity * 5 Amp Output Surge Current
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.
All devices are manufactured and tested on a MIL-PRF38534 certified line and are included in the DSCC Qualified Manufacturers List, QML-38534 for Hybrid Microcircuits. Each device contains an AlGaAs light emitting diode optically coupled to a photovoltaic diode stack which drives two discrete power MOSFETs. The device operates as a solidstate replacement for singlepole, normally open, (1 Form A) relays used for general purpose switching of signals and loads in high reliability applications.
The devices feature logic level input control and very low output on-resistance, making them suitable for both ac and dc loads. Connection A, as shown in the Functional Diagram, allows the device to switch either ac or dc loads. Connection B, with the polarity and pin configuration as shown, allows the device to switch dc loads only. The advantage of Connection B is that the on-resistance is significantly reduced, and the output current capability increases by a factor of two.
The devices are convenient replacements for mechanical and solid state relays where high component reliability with standard footprint lead configuration is desirable. Devices may be purchased with a variety of lead bend and plating options. See Selection Guide table for details. Standard Microcircuit Drawing (SMD) parts are available for each package and lead style. The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and SMD 5962-93140 are designed to switch loads on 28 Vdc power systems. They meet 80 V surge and 600 V spike requirements.
Selection Guide-Package Styles and Lead Configuration Options
Agilent Part Number and Options Commercial MIL-PRF-38534 Class H MIL-PRF-38534 Class E Standard Lead Finish Solder Dipped* Butt Joint/Gold Plate Gull Wing/Soldered* Crew Cut/Gold Plate SMD Part # Prescript for all below Either Gold or Soldered Gold Plate Solder Dipped* Butt Joint/Gold Plate Butt Joint/Soldered* Gull Wing/Soldered* Crew Cut/Gold Plate Crew Cut/Soldered*
* Solder Contains Lead
HSSR-7110 HSSR-7111 HSSR-7112 HSSR-711E Gold Plate Option #200 Option #100 Option #300 Option #600 Gold Plate Option -200 Option -100 Option -300 Gold Plate Option -200
59629314001HPX 9314001HPC 9314001HPA 9314001HYC 9314001HYA 9314001HXA 9314001HZC 9314001HZA
59629314002HPX 9314002HPC 9314002HPA 9314002HYC 9314002HYA 9314002HXA 9314001EPX 9314001EPC 9314001EPA
CAUTION: Maximum Switching Frequency - Care should be taken during repetitive switching of loads so as not to exceed the maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature. 2
Outline Drawing 8-pin DIP Through Hole
9.40 (0.370) 9.91 (0.390) 0.76 (0.030) 1.27 (0.050) 4.32 (0.170) MAX. 8.13 (0.320) MAX. 7.16 (0.282) 7.57 (0.298)
Device Marking
Agilent DESIGNATOR Agilent P/N DSCC SMD* DSCC SMD* PIN ONE/ ESD IDENT A QYYWWZ XXXXXX XXXXXXX XXX XXX 50434 COMPLIANCE INDICATOR,* DATE CODE, SUFFIX (IF NEEDED) COUNTRY OF MFR. Agilent CAGE CODE*
* QUALIFIED PARTS ONLY
0.51 (0.020) MIN.
3.81 (0.150) MIN.
0.20 (0.008) 0.33 (0.013)
Thermal Resistance Maximum Output MOSFET Junction to Case - JC = 15C/W
2.29 (0.090) 2.79 (0.110)
0.51 (0.020) MAX.
7.36 (0.290) 7.87 (0.310)
ESD Classification (MIL-STD-883, Method 3015) .......................... ( ), Class 2
NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
Absolute Maximum Ratings
Parameter Storage Temperature Range Operating Ambient Temperature Junction Temperature Operating Case Temperature Lead Solder Temperature (1.6 mm below seating plane) Average Input Current Peak Repetitive Input Current (Pulse Width < 100 ms; duty cycle < 50%) Peak Surge Input Current (Pulse Width < 0.2 ms; duty cycle < 0.1%) Reverse Input Voltage Average Output Current - Figure 2 Connection A Connection B Single Shot Output Current - Figure 3 Connection A (Pulse width < 10 ms) Connection B (Pulse width < 10 ms) Output Voltage Connection A Connection B Average Output Power Dissipation - Figure 4 VO -90 -90 90 90 800 V V mW 2 IOPK surge 5.0 10.0 A A IO 0.8 1.6 A A IF IFPK IFPK surge VR Symbol TS TA TJ TC Min. -65 -55 Max. +150 +125 +150 +145 260 for 10 s 20 40 100 5 Units C C C C C mA mA mA V 1 Note
3
Recommended Operating Conditions
Parameter Input Current (on) Input Current (on) Input Voltage (off) Operating Temperature
Symbol IF(ON) IF(ON) VF(OFF) TA
Min. 5 10 0 -55
Max. 20 20 0.6 +125
Units mA mA V C
Note 10 11
Hermetic Optocoupler Options
Note: Dimensions in millimeters (inches).
Option 100
Description Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel product.
4.32 (0.170) MAX.
0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110)
1.14 (0.045) 1.40 (0.055) 0.51 (0.020) MAX.
0.20 (0.008) 0.33 (0.013) 7.36 (0.290) 7.87 (0.310)
200
Lead finish is solder dipped rather than gold plated. This option is available on commercial and hi-rel product. DSCC Drawing part numbers contain provisions for lead finish.
300
Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is available on commercial and hi-rel product. This option has solder dipped leads.
4.57 (0.180) MAX. 0.20 (0.008) 0.33 (0.013) 9.65 (0.380) 9.91 (0.390)
4.57 (0.180) MAX.
0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110)
1.40 (0.055) 1.65 (0.065) 0.51 (0.020) MAX.
5 MAX.
600
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel product.
3.81 (0.150) MAX. 0.20 (0.008) 0.33 (0.013) 1.02 (0.040) TYP. 7.36 (0.290) 7.87 (0.310)
0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110)
4
Electrical Specifications TA =-55C to +125C, unless otherwise specified. See note 9.
Sym. Parameter Output Withstand Voltage Output On-Resistance Connection A R(ON) 1, 2, 3 IF = 10 mA, IO = 800 mA, (pulse duration 30 ms IF = 5 mA, IO = 800 mA, (pulse duration 30 ms Connection B IF = 10 mA, IO = 1.6 A, (pulse duration 30 ms IF = 5 mA, IO = 1.6 A, (pulse duration 30 ms Output Leakage Current Input Forward Voltage Input Reverse Breakdown Voltage Input-Output Insulation Turn On Time IO(OFF) VF VR II-O tON 1, 2, 3 1, 2, 3 1, 2, 3 1 9, 10, 11 VF = 0.6 V, VO = 90 V IF = 10 mA IF = 5 mA IR = 100 A RH 65%, t = 5 s, VI-O = 1500 Vdc, TA = 25C IF = 10 mA, VDD = 28 V, IO = 800 mA IF = 5 mA, VDD = 28 V, IO = 800 mA Turn Off Time tOFF 9, 10, 11 IF = 10 mA, VDD = 28 V, IO = 800 mA IF = 5 mA, VDD = 28 V, IO = 800 mA Output Transient Rejection Input-Output Transient Rejection dVo dt dVio dt 9 9 VPEAK = 50 V, CM = 1000 pF, CL = 15 pF, RM 1 M VDD = 5 V, VI-O(PEAK) = 50 V, RL = 20 k, CL = 15 pF 1000 500 0.02 1.25 5.0 1.0 6.0 6.0 0.25 0.25 V/s V/s ms V A ms 1, 10, 11, 12, 13 1, 10, 14, 15 17 18 4, 5 11 10 11 10 1.0 10-4 1.24 0.12 0.40 1.0 1.0 0.25 0.25 10 1.7 A V 8 9 11 10 6, 7 3, 11 3, 10 3, 11 3, 10 |VO(OFF)| Group A, Sub-group 1, 2, 3 Test Conditions VF = 0.6 V, IO = 10 A Min. 90 Typ.* 110 Max. Units V Fig. 5 Notes
5
Typical Characteristics All typical values are at TA = 25C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specified.
Parameter Output Off-Capacitance Output Offset Voltage Input Diode Temperature Coefficient Input Capacitance Input-Output Capacitance Input-Output Resistance Turn On Time With Peaking Symbol CO(OFF) |VOS| VF/TA CIN CI-O RI-O tON Test Conditions VO = 28 V, f = 1 MHz IF = 10 mA, IO = 0 mA IF = 10 mA VF = 0 V, f = 1MHz VI-O = 0 V, f = 1 MHz VI-O = 500 V, t = 60 s IFPK = 100 mA, IFSS = 10 mA VDD = 28 V, IO = 800 mA Typ. 145 2 -1.4 20 1.5 10
13
Units pF V mV/C pF pF ms
Fig. 16 19
Notes
7
8 4 4 1 6
0.22
Notes: 1. Maximum junction to case thermal resistance for the device is 15C/W, where case temperature, TC, is measured at the center of the package bottom. 2. For rating, see Figure 4. The output power PO rating curve is obtained when the part is handling the maximum average output current IO as shown in Figure 2. 3. During the pulsed RON measurement (IO duration <30 ms), ambient (TA) and case temperature (TC) are equal. 4. Device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together. 5. This is a momentary withstand test, not an operating condition. 6. For a faster turn-on time, the optional peaking circuit shown in Figure 1 may be implemented. 7. VOS is a function of IF, and is defined between pins 5 and 8, with pin 5 as the reference. VOS must be measured in a stable ambient (free of temperature gradients). 8. Zero-bias capacitance measured between the LED anode and cathode. 9. Standard parts receive 100% testing at 25C (Subgroups 1 and 9). SMD, Class H and Class E parts receive 100% testing at 25C, 125C and -55C (Subgroups 1 and 9, 2 and 10, 3 and 11 respectively). 10. Applies to HSSR-7112 and 5962-9314002Hxx devices only. 11. Applies to HSSR-7110, HSSR-7111, HSSR-711E, 5962-9314001Hxx and 5962-9314001Exx devices only.
HSSR-7110 1 V CC (+5V) IF +2 VF -3 R2 1200 R1 330 R3 C 15 F IN 1/4 54ACTOO R1 = REQUIRED CURRENT LIMITING RESISTOR FOR IF (ON) = 10 mA. R2 = PULL-UP RESISTOR FOR VF (OFF) < 600 mV; IF (VCC-VOH ) < 600 mV, OMIT R2. R3, C = OPTIONAL PEAKING CIRCUIT. TYPICAL VALUES R3 () 330 100 33 IF (PK) (mA) 10 (NO PK) 20 40 100 HSSR-7110 t ON (ms) 2.0 1.0 0.48 0.22 4 7 6 5 8
1/4 54ACTOO*
* USE SECOND GATE IF IF (PK) > 50 mA REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V CC
Figure 1. Recommended Input Circuit.
6
1.0
12
1.0
P O - OUTPUT POWER DISSIPATION - W
11
IF
10 mA
0.8
0.8
IOPK SURGE - OUTPUT CURRENT - A
IO - OUTPUT CURRENT - A
10 9 8 7 6 5 CONNECTION-A 4 3 10 200 400 600 800 1000 PULSE DURATION - ms CONNECTION-B
0.6
0.6
0.4 CONNECTION - A IF 10 mA CA = 40 C/W CA = 80 C/W -25 5 35 65 95 125 155
0.4 CONNECTION - A IF 10 mA CA = 40 C/W CA = 80 C/W -25 5 35 65 95 125 155
0.2
0.2
0 -55
0 -55
T A - AMBIENT TEMPERATURE - C
T A - AMBIENT TEMPERATURE - C
Figure 2. Maximum Average Output Current Rating vs. Ambient Temperature.
Figure 3. Single Shot (non-repetitive) Output Current vs. Pulse Duration.
Figure 4. Output Power Rating vs. Ambient Temperature.
1.10 1.08 V F = 0.6 V IO = 10 A
1.8 1.6 CONNECTION - A IF 10 mA IO = 800 mA (PULSE DURATION 30 ms)
0.8
NORMALIZED TYPICAL OUTPUT WITHSTAND VOLTAGE
1.04 1.02 1.00 0.98 0.96 0.94 0.92 -55 -25 5 35 65 95 125
1.4 1.2 1.0 0.8 0.6 -55
IO - OUTPUT CURRENT - A
1.06
CONNECTION - A 0.6 IO 10 mA IO (PULSE DURATION 30 ms) 0.4 0.2 0 -0.2 -0.4 -0.6 T A = 125C T A = 25C T A = -55C
NORMALIZED TYPICAL OUTPUT RESISTANCE
-25
5
35
65
95
125
-0.8 -0.6
-0.4
-0.2
0
0.2
0.4
0.6
T A - AMBIENT TEMPERATURE - C
T A - AMBIENT TEMPERATURE - C
V O - OUTPUT VOLTAGE - V
Figure 5. Normalized Typical Output Withstand Voltage vs. Temperature.
Figure 6. Normalized Typical Output Resistance vs. Temperature.
Figure 7. Typical On State Output I-V Characteristics.
10 -7
10 -1
IF - INPUT FORWARD CURRENT - A
CONNECTION A V F = 0.6 V V O = 90 V
IO(OFF) - OUTPUT LEAKAGE CURRENT - A
10 -8
10 -2 10 -3 T A = 125C 10
-4
10 -9
10 -10
10
-5
T A = 25C T A = -55C
10
-11
20
35
65
95
125
10 -6 0.4
0.6
0.8
1.0
1.2
1.4
1.6
T A - TEMPERATURE - C
V F - INPUT FORWARD VOLTAGE - V
Figure 8. Typical Output Leakage Current vs. Temperature.
Figure 9. Typical Input Forward Current vs. Input Forward Voltage.
7
V DD
50% IF P.W. = 15 ms
50%
PULSE GEN. Z O = 50 t f = t r = 5 ns 1 IF +2 VF -3
HSSR-7110 8 7 6 5
RL VO MONITOR NODE C L = 25 pF (C L INCLUDES PROBE AND FIXTURE CAPACITANCE)
VO 10%
90%
IF MONITOR R (MONITOR) 200
4
t ON
t OFF
Figure 10. Switching Test Circuit for tON, tOFF.
GND
GND
2.6 2.4 CONNECTION A IF = 10 mA V DD = 28 V IO = 800 mA
3.0 2.6
T ON - TURN ON TIME - ms
T ON - TURN ON TIME - ms
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -55
T ON - TURN ON TIME - ms
2.2 1.8 1.4 1.0 0.6 0.2 5 10
CONNECTION A V DD = 28 V IO = 800 mA T A = 25C
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 CONNECTION - A IF = 10 mA IO = 800 mA T A = 25C
-25
5
35
65
95
125
15
20
0
0
10
20
30 40
50
60
70
80
90
T A - TEMPERATURE - C
IF - INPUT CURRENT - mA
V DD - VOLTAGE - V
Figure 11. Typical Turn On Time vs. Temperature.
Figure 12. Typical Turn On Time vs. Input Current.
Figure 13. Typical Turn On Time vs. Voltage.
C O(OFF) - OUTPUT OFF CAPACITANCE - pF
15.0 14.8 CONNECTION A IF = 10 mA V DD = 28 V IO = 800 mA
45 40 CONNECTION A V DD = 28 V IO = 800 mA T A = 25C
440 400 360 320 280 240 200 160 120 0 20 25 5 10 15 V O(OFF) - OUTPUT VOLTAGE - V 30 CONNECTION A f = 1 MHz T A = 25C
T OFF - TURN OFF TIME - s
14.6 14.4 14.2 14.0 13.8 13.6 13.4 13.2 -55 -25 5 35
T OFF - TURN OFF TIME - s
125
35 30 25 20 15 10
65
95
5
5
10
15
20
T A -TEMPERATURE - C
IF - INPUT CURRENT - mA
Figure 14. Typical Turn Off Time vs. Temperature.
Figure 15. Typical Turn Off Time vs. Input Current.
Figure 16. Typical Output Off Capacitance vs. Output Voltage.
8
HSSR-7110 1 IF INPUT OPEN +2 VF -3 4 7 6 5 V PEAK + PULSE GENERATOR C M INCLUDES PROBE AND FIXTURE CAPACITANCE R M INCLUDES PROBE AND FIXTURE RESISTANCE 90% V PEAK 10% 10% 90% 8 CM RM VM MONITOR NODE
tr
tf
V M (MAX) 5 V (0.8) V (PEAK) dVO = tr dt OR (0.8) V (PEAK) tf
OVERSHOOT ON VPEAK IS TO BE 10%.
Figure 17. Output Transient Rejection Test Circuit.
V DD
HSSR-7110 1 IF +2 VF -3 S1 B V IN A 4 7 6 5 8
RL VO CL (C L INCLUDES PROBE PLUS FIXTURE CAPACITANCE )
V I-O + PULSE GENERATOR
90% V I-O(PEAK) 10%
90%
10%
tr
tf
V O(OFF) S 1 AT A (V F = 0 V)
V O(OFF) (min) 3.25 V VO(ON) (max) 0.8 V O(ON) S 1 AT B (I F = 10 mA)11 OR (IF = 5 mA)10
(0.8) V I-O(PEAK) dV I-O (0.8) V I-O(PEAK) = OR tf dt tr OVERSHOOT ON VI-O(PEAK) IS TO BE 10%
Figure 18. Input-Output Transient Rejection Test Circuit.
9
ISOTHERMAL CHAMBER HSSR-7110 IF
T je
T jf1
T jd
T jf2
104
15 TC
15
15
1 +2 -3 4
8+ 7 V OS 6 5DIGITAL NANOVOLTMETER
CA TA T je = LED JUNCTION TEMPERATURE T jf1 = FET 1 JUNCTION TEMPERATURE
Figure 19. Voltage Offset Test Setup.
HSSR-7110 1 2 V IN R IN 200 4 5 3 8 7 6 R OUT 1.0
NOTE: IN ORDER TO DETERMINE V OUT CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING CA , DETERMINE THE CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE DERATING REQUIREMENTS AS SHOWN.
T jf2 = FET 2 JUNCTION TEMPERATURE T jd = FET DRIVER JUNCTION TEMPERATURE
R OUT 1.0
V O (SEE NOTE)
T C = CASE TEMPERATURE (MEASURED AT CENTER OF PACKAGE BOTTOM) T A = AMBIENT TEMPERATURE (MEASURED 6" AWAY FROM THE PACKAGE) CA = CASE-TO-AMBIENT THERMAL RESISTANCE ALL THERMAL RESISTANCE VALUES ARE IN C/W
5.5 V
Figure 21. Thermal Model.
Figure 20. Burn-In Circuit.
Applications Information Thermal Model The steady state thermal model for the HSSR-7110 is shown in Figure 21. The thermal resistance values given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistances between the LED and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. The components do, however, interact indirectly through CA, the case-to-ambient thermal resistance. All heat generated flows through CA, which raises the case temperature TC accordingly. The value of CA depends on the conditions of the board design and is, therefore, determined by the designer.
The maximum value for each output MOSFET junction-tocase thermal resistance is specified as 15C/W. The thermal resistance from FET driver junction-to-case is also 15C/W. The power dissipation in the FET driver, however, is negligible in comparison to the MOSFETs. On-Resistance and Rating Curves The output on-resistance, RON, specified in this data sheet, is the resistance measured across the output contact when a pulsed current signal (IO = 800 mA) is applied to the output pins. The use of a pulsed signal ( 30 ms) implies that each junction temperature is equal to the ambient and case temperatures. The steadystate resistance, RSS, on the other hand, is the value of the resistance measured across the output contact when a DC current signal is applied to the
output pins for a duration sufficient to reach thermal equilibrium. RSS includes the effects of the temperature rise of each element in the thermal model. Rating curves are shown in Figures 2 and 4. Figure 2 specifies the maximum average output current allowable for a given ambient temperature. Figure 4 specifies the output power dissipation allowable for a given ambient temperature. Above 55C (for CA = 80C/ W) and 107C (for CA = 40C/W), the maximum allowable output current and power dissipation are related by the expression RSS = PO(max)/ (IO(max))2 from which RSS can be calculated. Staying within the safe area assures that the steady-state junction temperatures remain less than 150C. As an example, for TA = 95C and CA = 80C/W, Figure 2 shows
10
that the output current should be limited to less than 610 mA. A check with Figure 4 shows that the output power dissipation at TA = 95C and IO = 610 mA, will be limited to less than 0.35 W. This yields an RSS of 0.94 . Design Considerations for Replacement of Electro-Mechanical Relays The HSSR-7110 family can replace electro-mechanical relays with comparable output voltage and current ratings. The following design issues need to be considered in the replacement circuit. Input Circuit: The drive circuit of the electromechanical relay coil needs to be modified so that the average forward current driving the LED of the HSSR7110 does not exceed 20 mA. A nominal forward drive current of 10 mA is recommended. A recommended drive circuit with 5 volt VCC and CMOS logic gates is shown in Figure 1. If higher VCC voltages are used, adjust the current limiting resistor to a nominal LED forward current of 10 mA. One important consideration to note is that when the LED is turned off, no more than 0.6 volt forward bias should be applied across the LED. Even a few microamps of current may be sufficient to turn on the HSSR- 7110, although it may take a considerable time. The drive circuit should maintain at least 5 mA of LED current during the ON condition. If the LED forward current is less than the 5 mA level, it will cause the HSSR-7110 to turn on with a longer delay. In addition, the power dissipation in the output power MOSFETs increases, which, in turn, may 11
violate the power dissipation guidelines and affect the reliability of the device. Output Circuit: Unlike electromechanical relays, the designer should pay careful attention to the output onresistance of solid state relays. The previous section, "OnResistance and Rating Curves" describes the issues that need to be considered. In addition, for strictly dc applications the designer has an advantage using Connection B which has twice the output current rating as Connection A. Furthermore, for dc-only applications, with Connection B the on-resistance is considerably less when compared to Connection A. Output over-voltage protection is yet another important design consideration when replacing electro-mechanical relays with the HSSR-7110. The output power MOSFETs can be protected using Metal oxide varistors (MOVs) or TransZorbs against voltage surges that exceed the 90 volt output withstand voltage rating. Examples of sources of voltage surges are inductive load kickbacks, lightning strikes, and electro-static voltages that exceed the specifications on this data sheet. For more information on output load and protection refer to Application Note 1047. References: 1. Application Note 1047, "Low On-Resistance Solid State Relays for High Reliability Applications." 2. Reliability Data for HSSR7110. MOV is a registered trademark of GE/ RCA Solid State. TransZorb is a registered trademark of General Semiconductor.
MIL-PRF-38534 Class H, Class E and DSCC SMD Test Program Class H: Agilent Technologies' Hi-Rel Optocouplers are in compliance with MIL-PRF38534 Class H. Class H devices are also in compliance with DSCC drawing 596293140. Testing consists of 100% screening and quality conformance inspection to MIL-PRF-38534. Class E: Class E devices are in compliance with DSCC drawing 5962-9314001Exx. Agilent Technologies has defined the Class E device on this drawing to be based on the Class K requirements of MIL-PRF38534 with exceptions. The exceptions are as follows: 1. Nondestructive Bond Pull, Test method 2023 of MILSTD-883 is device screening is not required. 2. Particle Impact Noise Detection (PIND), Test method 2020 of MIL-STD883 in device screening and group C testing is not required. 3. Die Shear Strength, Test method 2019 of MIL-STD883 in group B testing is not required. 4. Internal Water Vapor Content, Test method 1018 of MIL-STD-883 in group C testing is not required. 5. Scanning Electron Microscope (SEM) inspections, Test method 2018 of MIL-STD-883 in element evaluation is not required.
www.agilent.com/ semiconductors
For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. November 18, 2004 5989-1944EN
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